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b0b体育app下载:2D Memory Selectors with Giant Nonlinearity Enabled by Van der Waals Heterostructures

时间:2024-04-12来源:国际前沿科学研究院点击:219

Xiaofan WangRuixi QiaoHuan LuWeiwei HeYing Liu,

 Tao ZhouDongyang WanQin WangYanpeng Liu*Wanlin Guo*

Small,First published: 04 April 2024

b0b体育app下载:Abstract

The integration of one-selector-one-resistor crossbar arrays requires the selectors featured with high nonlinearity and bipolarity to prevent leakage currents and any crosstalk among distinct cells. However, a selector with sufficient nonlinearity especially in the frame of device miniaturization remains scarce, restricting the advance of high-density storage devices. Herein, a high-performance memory selector is reported by constructing a graphene/hBN/WSe2 heterostructure. Within the temperature range of 300–80 K, the nonlinearity of this selector varies from ≈103 – ≈104 under forward bias, and increases from ≈300 – ≈105 under reverse bias, the highest reported nonlinearity among 2D selectors. This improvement is ascribed to direct tunneling at low bias and Fowler–Nordheim tunneling at high bias. The tunneling current versus voltage curves exhibit excellent bipolarity behavior because of the comparable hole and electron tunneling barriers, and the charge transport polarity can be effectively tuned from N-type or P-type to bipolar by simply changing source-drain bias. In addition, the conceptual memory selector exhibits no sign of deterioration after 70 000 switching cycles, paving the way for assembling 2D selectors into modern memory devices.


Link:https://doi.org/10.1002/smll.202310158


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